?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com FFPF12UP20DN rev. a FFPF12UP20DN 6 a, 200 v, ultrafast dual diode FFPF12UP20DN applications ? output rectifiers ? switching mode power supply ? free-wheeling diode ? power switching circuits absolute maximum ratings (per diode) t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter value unit v rrm peak repetitive reverse voltage 200 v v rwm working peak reverse voltage 200 v v r dc blocking voltage 200 v i f(av) average rectified forward current @ t c = 120 c6 a i fsm non-repetitive peak surge current 60hz single half-sine wave 60 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter max unit r jc maximum thermal resistance, junction to case 5.0 c/w device marking device package r eel size tape width quantity f12up20dn FFPF12UP20DNtu to-220f - - 50 1. anode 2. cathode 3. anode 1 2 3 1.anode 2.cathode 3.anode 1 to-220f tm february 2006 6 a, 200 v, ultrafast dual diode the FFPF12UP20DN is an ultrafast dual diode with low forward voltage drop and rugged uis capability. this device is intended for use as freewheeling and c lamping diodes in a variety of switching power supplies and other power switching applications. it is specially suited for us e in switching power s upplies and industrial applicationa as welder and ups application. features ? ultrafast recovery t rr = 35 ns (@ i f = 6 a) ? max forward voltage, v f = 2.2 v (@ t c = 25c) ? reverse voltage, v rrm = 200 v ? avalanche energy rated ? rohs compliant
2 www.fairchildsemi.com FFPF12UP20DN 6 a, 200 v, ultrafast dual diode electrical characteristics (per diode) t c = 25c unless otherwise noted * pulse test: pulse width=300 s, duty cycle= 2% test circuit and waveforms symbol parameter min. typ. max. unit v f * i f = 6 a i f = 6 a t c = 25 c t c = 100 c - - - - 1.15 1.0 v v i r * v r = 200 v v r = 200 v t c = 25 c t c = 100 c - - - - 100 500 a a t rr i f = 1 a, di/dt = 100 a/s, v cc = 30 v i f = 6 a, di/dt = 200 a/s, v cc = 130 v t c = 25 c t c = 25 c - - - - 30 35 ns ns t a t b q rr i f = 6 a, di/dt = 200 a/s, v cc = 130 v t c = 25 c t c = 25 c t c = 25 c - - - 12 12 24 - - - ns ns nc w avl avalanche energy (l = 20mh) 10 - - mj ?2006 fairchild semiconductor corporation FFPF12UP20DN rev. a
3 www.fairchildsemi.com FFPF12UP20DN 6 a, 200 v, ultrafast dual diode typical performance characteristics figure 1. typical forward voltage dr op figure 2. typical reverse current figure 3. typical junction capacitance f igure 4. typical reverse recovery time figure 5. typical reverse recovery current figure 6. forward current deration curve 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 t c = 75 o c t c = 125 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 0 50 100 150 200 1e-3 0.01 0.1 1 10 t c = 75 o c t c = 100 o c t c = 125 o c reverse current, i r [ a] reverse voltage, v r [v] t c = 25 o c 0.1 1 10 100 0 20 40 60 80 100 120 140 junction capacitance, c j [pf] reverse voltage, v r [v] f = 1mhz 100 200 300 400 500 10 15 20 25 30 35 40 45 50 t c = 125 o c t c = 75 o c reverse recovery time, trr [ns] di/dt, [a/ s] t c = 25 o c i f = 6a 100 200 300 400 500 0 1 2 3 4 5 6 7 t c = 125 o c t c = 75 o c reverse recovery current, irr [a] di/dt, [a/ s] t c = 25 o c i f = 6a 100 110 120 130 140 150 0 1 2 3 4 5 6 7 8 average forward current, i f(av) [a] case temperature, t c [ o c] dc ?2006 fairchild semiconductor corporation FFPF12UP20DN rev. a
package demensions dimensions in millimeters FFPF12UP20DN 6 a, 200 v, ultrafast dual diode (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?0.05 to-220f 4 www.fairchildsemi.com ?2006 fairchild semiconductor corporation FFPF12UP20DN rev. a
5 www.fairchildsemi.com ?2006 fairchild semiconductor corporation FFPF12UP20DN rev. a FFPF12UP20DN 6 a, 200 v, ultrafast dual diode
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